| The Class 100 photolithography room is equipped with a four foot spinner hood which houses two hotplates and two spinners, one for photoresist application and one for solvent cleaning and spin development. An additional four foot hood dedicated for development is located in the wet processing room. An SEM with E-Beam Direct Write Capability is provided in Physics. |
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4000 series Laurell Technology spinners |
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| Programmable spinners with a maximum speed of 6.1 Krpm, they can hold substrates from 10 mm to 6 inches diameter. |
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Suss Microtech MA6 aligner |
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| A frontside or backside photomask aligner that exposes wafers at a wavelength of 320 nm, it can perform proximity, contact or vacuum contact. Three, four, five or six inch masks may be used and a series of chucks can accommodate substrates of any size or shape from 10 mm to six inches in diameter. |
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OAI Flood Exposure System |
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| A high intensity UV lamp that emits 10 mW/cm2 intensity light at 365 nm wavelength. |
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YES LP-III vapor prime furnace |
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| A primer furnace used to apply HMDS to substrates for photoresist adhesion promotion. (It is currently removed from the lab for repairs.) |
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Wet Processing |
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| The class 1,000 wet processing room is equipped with an eight foot acid bench and eight foot solvent bench. Two additional four foot benches for performing novel processes or prolong wet etches were also installed. |
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Autosamdri-815 Tousimis liquid CO2 critical point MEMS dryer |
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| A critical CO2 MEMS dryer releases MEMS devices without stiction. It holds standard die size of 10mm x 10mm. |
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Thermal Processing |
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Anealsys AS-Micro Rapid Thermal Annealer |
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| With a maximum temperature of 1200ºC and a maximum ramp rate of 300 ºC/ min, the RTA is a lamp heated, quartz tube furnace which. The furnace is purged with nitrogen and can accommodate a single 2.75 inch wafer. |
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Lindberg/Blue M mini-quartz tube furnace |
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| This single zone furnace with a one inch diameter quartz tube has a maximum temperature of 1100ºC. |
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Lindberg/Blue M quartz tube furnace |
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| Purchased for use as a wet oxidation furnace, the three zone furnace has a maximum temperature of 1200ºC. It can hold a maximum of 25 six inch wafers; the number and size of wafers are dependent upon available quartz boats. |
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Thermolyne 6000 programmable ashing furnace |
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| A box furnace with maximum temperature of 1200ºC, it is programmable for a maximum of eight process steps, and is equipped with a nitrogen purge line. |
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Blue M Stabil-Therm gravity oven |
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| Used primarily for dehydration bakes and hard bakes, this small box furnace has a temperature range from 50ºC to 250ºC. |
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Deposition Systems |
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BOC Temescal BJD-2000 electron beam evaporator |
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| Used for depositing metals and dielectrics, this evaporator has six crucible pockets to allow for multiple film deposition without breaking vacuum. The planetary can hold seventeen, three inch wafers. It is equipped with a heater and an oxygen ion source, for assisted deposition of silicon oxide and aluminum oxide films. |
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CVC 610 sputtering station |
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Used for metal deposition, the sputtering station can hold a maximum of six substrates of any size or shape up to six inches in diameter. The system currently holds an eight inch Aluminum target for sputtering, a two inch sputter gun that allows for interchangeable targets, a heater, and an ion mill. Current interchangeable targets are chrome, tantalum, titanium, aluminum, copper, platinum, and gold. Since this is a DC magnetron station, dielectrics and magnetic materials cannot be used. Reactive sputtering can be performed with
nitrogen to create aluminum nitride. |
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Oxford 80+ Ionfab PECVD |
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| The plasma enhanced chemical vapor deposition system is used for depositing silicon oxide and silicon nitride at 300ºC. The large twelve inch substrate table can hold several substrates at once. |
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Tystar Mini-Tytan LPCVD furnace |
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| This short tube, stacked LPCVD furnace can accommodate three quartz tubes for deposition. The tube furnace can accommodate four inch or six inch wafers. The two unused positions have not been defined. |
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Plasma Etching |
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| This fluorine based plasma etcher can be used to etch polymers, dielectrics and metals. It is not chlorine based; the current process gases are CF4, SF6 and oxygen, with the potential of adding CHF3 or argon. The twelve inch process table can hold multiple wafers; however, the active etching area is restricted if using ICP. |
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Characterization |
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Tencor Alpha-step 200 stylus profiler |
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| A stylus profiler for measuring structured feature thickness or width of soft films, like photoresists or polymers, or hard films. I can measure features with a maximum vertical height of 160 microns, with a resolution of 5 nm. |
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Zeiss light field/dark field microscope |
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| The microscope has a maximum magnification of xx. A digital SLR camera
(Cannon XXX) can be mounted for capturing
images. |
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Packaging |
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West Bond 747677E three way convertible, manual wedge-wedge and ball-wedge bonder |
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| A gold wire bonder for ball bonding can be converted to wedge bonder for smaller bonding pads or deep access bonding. |
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